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No Preview Available! Shenzhen Tuofeng Semiconductor Technology Co. Values typ. Unit max. PCB is vertical in still air. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 6 Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Gate charge total Gate charge total, sync.
Product Summary. R DS on ,max. TO - Symbol Conditions. Continuous drain current. Pulsed drain current 2. Avalanche current, single pulse 3. Avalanche energy, single pulse. Gate source voltage. I D,pulse. Power dissipation. Operating and storage temperature. Thermal characteristics. Thermal resistance, junction - case. R thJC. R thJA. Static characteristics. Drain-source breakdown voltage. Gate threshold voltage. Zero gate voltage drain current. I DSS. Gate-source leakage current.
I GSS. Drain-source on-state resistance 5. Gate resistance. Dynamic characteristics. Input capacitance. Output capacitance. Reverse transfer capacitance. Turn-on delay time. Rise time. Turn-off delay time. Fall time. Gate Charge Characteristics 6. Gate to source charge. Gate charge at threshold. Gate to drain charge. Switching charge. Gate charge total. Gate plateau voltage. Gate charge total, sync. Output charge. Reverse Diode. Diode continuous forward current. Diode pulse current.
Diode forward voltage. Reverse recovery charge. C iss. C oss. C rss. V plateau. Q g sync. Q oss. I S,pulse. Vishay Siliconix. Vishay Intertechnology. Fuji Electric. Analog Devices.
50N03 MOSFET. Datasheet pdf. Equivalent
50N03 Datasheet PDF